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Renesas Tp65H035G4Ys Gan Transistor, 650V, 46.5A, To-247 - diskusia

Renesas Tp65H035G4Ys Gan Transistor, 650V, 46.5A, To-247
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Výrobca: RENESAS

Výrobné číslo: TP65H035G4YS

RENESAS - GAN TRANSISTOR, 650V, 46.5A, TO-247 - TP65H035G4YS

Cena 19,97 € v 1 obchode

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  • Súvisiace položky
Diodes Inc. Ap431Santr-G1 Volt Ref, 2.5V To 36V, -40 To 125Deg CDiodes Inc. Ap431Santr-G1 Volt Ref, 2.Nexperia Buk9V13-40Hx Mosfet, 40V, 42A, 175Deg C, 46WNexperia Buk9V13-40Hx Mosfet, 40V, 42AOnsemi Fdn340P Mosfet, P, Sot-23Onsemi Fdn340P Mosfet, P, Sot-23Microchip Pic16F1503-I/sl Mcu, 8Bit, Pic16, 20Mhz, Soic-14Microchip Pic16F1503-I/sl Mcu, 8Bit, PMicrochip Pic12F1840-I/sn Mcu, 8Bit, Pic12, 32Mhz, Soic-8Microchip Pic12F1840-I/sn Mcu, 8Bit, PPower Integrations Tny290Kg-Tl Ac/dc Converter, Flyback, 28.5W, 150DegcPower Integrations Tny290Kg-Tl Ac/dc CInfineon Irf7343Trpbf Mosfet, Np Ch, 55V, 3.4A, 8SoicInfineon Irf7343Trpbf Mosfet, Np Ch, 5Ni Nat9914Bpdf-9 Assortment Kit, Nat9914Bpdf-9, 9 ChipNi Nat9914Bpdf-9 Assortment Kit, Nat99Diodes Inc. Dmph4011Sk3Q-13 Power Mosfet, 40V, 79A, To-252-3Diodes Inc. Dmph4011Sk3Q-13 Power MosfNexperia Pesd4Usb3B-Tbsx Esd Diode, Aec-Q101, 3.3V, Dfn2510D-10Nexperia Pesd4Usb3B-Tbsx Esd Diode, AeMaxim Integrated Products Max20031Batma/v+ Power Management Ic, -40 To 125Deg CMaxim Integrated Products Max20031BatmTaiwan Semiconductor Ss12Lshrvg Schottky Rectifier, 20V, 1A, Sod-123HeTaiwan Semiconductor Ss12Lshrvg Schott

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